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Laboratoire Pierre Aigrain

Accueil du site > Séminaires > 2011 > Seminar, november 4, 2011

Séminaire 4 novembre 2011

Shot noise in magnetic tunnel junctions

Arakawa Tomonori (Kyoto University)

The resistance of a magnetic tunnel junction (MTJ) depends on the relative magnetization of the ferromagnetic layers such that it is low in the parallel (P) configuration while it is high in the anti-parallel (AP) one. The coherent tunneling is theoretically predicted to play a central role in MTJs with the crystalline MgO barriers. In this presentation, we report the shot noise measurement in well-crystalline CoFeB/MgO/CoFeB-based MTJs with the increased experimental accuracy. We observed reduced Fano factor (F 0.91) in P configuration, while F in AP configuration was close to 1. Moreover, this reduction is independent to the sample temperature and the magnetic field.