laboratoire pierre aigrain
électronique et photonique quantiques
laboratoire pierre aigrain

Seminaire, 27 avril 2015

Susmita Basak (Fritz Haber Institute of the Max Planck<br class='autobr' />Society, Berlin)
The effect of interfaces and nanoscale confinement in the topological insulator, Bismuth Selenide.

The surface environment of topological insulators possesses ideal
properties for advanced electronics such as spin-polarized
conductivity and suppressed scattering. Understanding the contrasting
behavior of electrons on the surface of a topological band insulator
with respect to that of a conventional band insulator (semiconductor) or
metal is one of the most important goals in identifying the potential for
developing novel electronics based on topological materials.To explore
this area we developed a Green’s function implementation
of the k.p model to numerically simulate junctions and surfaces of
topological insulator Bi2Se3 based on experimentally measured bulk
electron kinetics. This model explains a number of interesting features
observed in angle-resolved photoemission experiment for the surface
deposition on Bi2Se3. We have further extended this model to simulate
small clusters and studied the electronic properties of Bi2Se3 under
nanoscale confinement. Our calculations explain the effect of quantum
confinement as observed in optical spectra of Bi2Se3 nanoplatelets.